超高周波工学研究室

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研究業績

Journal Papers

1. H. Morino, T. Maruyama, and K. Iiyama,
   “Reduction of Wavelength Dependence of Coupling Characteristics Using Si Optical Waveguide Curved Directional Coupler,”
   J. Lightwave Technol., vol. 32, no. 12, pp. 2188-2192, Jun. 2014.
2. G. Li, T. Maruyama, and K. Iiyama,
   “Low-propagation-loss Ta2O5 Optical Waveguides on Silica Substrate,”
   Jpn. J. Appl. Phys., vol. 53, no. 4S, pp. 04EG12(4 pages), Mar. 2014.
3. K. Maekita, T. Maruyama, K. Iiyama, and T. Suzuki,
   “GHz Response of Metamorphic InAlAs Metal-semiconductor-metal Photodetector on GaAs Substrate,”
   Jpn. J. Appl. Phys., vol. 53, no. 2S, pp. 02BC16(5 pages), Feb. 2014.

International Conference

1. G. Li, K. Maekita, T. Maruyama, and K. Iiyama, “Structure dpendence of over 10 GHz lateral Si-PIN photodiode fabricated by CMOS compatible process,”
   2014 International Conference on Solid State Devices and Materials（SSDM 2014）, PS-7-1, Tsukuba, Japan（2014.9）.
2. N. A. Lasam, K. Iiyama, T. Maruyama, Y. Kimura, and N. V. Tu, “Linearization of nonlinear beat frequency in FMCW interferometry through waveform modifying technique,”
   2014 2nd International Conference on Electronic Design（ICED 2014）, Penang, Malaysia（2014.8）
3. T. Maruyama, K. Maekita, G. Li, and K. Iiyama, “High speed operation of SOI pin photodiodes fabricate by CMOS compatible process,”
   19th OptoElectronics and Communications Conference (OECC 2014), TUPS1-34, Melbourne, Australia（2014.7）.
4. K. Iiyama, T. Shimotori, R. Gyobu, T. Hishiki, and T. Maruyama, \\“10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 μm CMOS process,”
   19th OptoElectronics and Communications Conference (OECC 2014), TU4C-3, Melbourne, Australia, （2014.7）.