超高周波工学研究室

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International Conference

1. T. Shimotori, K. Maekita, T. Maruyama, and K. Iiyama,
   “High-speed Si CMOS APD by standard CMOS process,”
   2nd International Symposium on Photonics and Electronics Convergence（ISPEC 2012）, P-11, Tokyo, Japan（2012.12）.
2. T. Maruyama, S. Ebuchi, M. Matsumoto, and K. Iiyama,
   “PZT optical waveguide on Silicon substrate,”
   2012 International Conference on Solid State Devices and Materials（SSDM 2012）,
   PS-7-25, Kyoto, Japan（2012.9）.
3. G. Li, Y. Hashimoto, S. Ebuchi, T. Maruyama, and K. Iiyama,
   “High-efficiency optical coupling to planar photodiode using metal reflector loaded waveguide grating coupler,”
   12th International Conference on Numeri-

cal Simulation of Optoelectronic Devices（NUSOD2012）, TuB4, Shanghai, China（2012.8）.

1. K. Maekita, T. Shimotori, T. Maruyama, and K. Iiyama,
   “GHz response of Si photodiodes fabricated with

0.35-μm Si BiCMOS technology,”
9th International Conference on Group IV photonics, ThP10, San Diego, USA（2012.8）.

1. M. Matsumoto, S. Ebuchi, T. Maruyama, and K. Iiyama,
   “Ferroelectric properties of PZT and PLZT films

on Si substrate with ITO buffer layer,” \\9th International Conference on Group IV photonics, ThE4, San Diego, USA（2012.8）

1. H. Morino, T. Maruyama, and K. Iiyama,
   “Propagation of lossy wave in Si slot waveguide,”
   9th International Conference on Group IV photonics, ThE1, San Diego, USA（2012.8）.
2. T. Shimotori, K. Maekita, T. Maruyama, and K. Iiyama,
   “Characterization of APDs fabricated by 0.18 μm CMOS process in blue wavelength region,
   17th Opto-Electronics and Communications Conference （OECC 2012）, 5D1-3, Busan, Korea（2012.7）.
3. S. Ebuchi, M. Matsumoto, T. Maruyama, and K. Iiyama,
   “Ferroelectric properties of PZT film on Si sub -

strate with ITO buffer layer,”
2012 Material Research Society Spring Meeting, M-5.4, Sun Francisco, USA（2012.4）.