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--- 2008 [2024/03/05 22:02] – admin
+++ 2008 [2024/03/05 22:09] (現在) – admin
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   - D. Plumwongrot, M. Kurokawa, T. Okumura, Y. Nishimoto, T. Maruyama, N. Nishiyama, and S. Arai,\\ "Reduction of RIE Induced Damage on Lasing Properties of GaInAsP/InP DQW Lasers Fabricated by 2-step Growths,"\\ OPTO2008 (part of SPIE Photonics West 2008), San Jose (USA), Jan. 24, 2008.
   - T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, S. Arai,\\ "Injection type GaInAsP/InP/Si DFB lasers directly bonded on SOI substrate,"\\ The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008), Versailles (France), TuA1.6, May 27, 2008.
-  - M. Kurokawa, D. Plumwongrot, K. Ozawa, T. Maruyama, S. Arai and N. Nishiyama,// "RIE-plasma induced optical property degradation in GaInAsP/InP quantum-well structures,"\\ The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008), Versailles (France), WeP39, May 28, 2008.
+  - M. Kurokawa, D. Plumwongrot, K. Ozawa, T. Maruyama, S. Arai and N. Nishiyama,\\ "RIE-plasma induced optical property degradation in GaInAsP/InP quantum-well structures,"\\ The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008), Versailles (France), WeP39, May 28, 2008.
-  - M. Kurokawa, D. Plumwonrot, T. Maruyama, N. Nishiyama and S. Arai,\\ "CH<sub>4</sub>/H2-RIE induced optical property degradation in GaInAsP/InP quantum-well structures,"\\ International Nano-Optoelectronic Workshop 2008 (iNOW 2008), Tokyo, Saiko and Shonan (Japan), P3-19, Aug. 7, 2008.
+  - M. Kurokawa, D. Plumwonrot, T. Maruyama, N. Nishiyama and S. Arai,\\ "CH<sub>4</sub>/H<sub>2</sub>-RIE induced optical property degradation in GaInAsP/InP quantum-well structures,"\\ International Nano-Optoelectronic Workshop 2008 (iNOW 2008), Tokyo, Saiko and Shonan (Japan), P3-19, Aug. 7, 2008.
+  - K. Inoue, N. Nishiyama, H. Enomoto, S. Tamura, T. Maruyama and S. Arai,\\ "Evaluation of Si wire waveguide fabricated by parallel plate RIE process using double layered EB resist containing C<sub>60</sub>,"\\ International Nano-Optoelectronic Workshop 2008 (iNOW 2008), Tokyo, Saiko and Shonan (Japan), P3-24, Aug. 7, 2008.
+  - H. Yonezawa, T. Maruyama, T. Okumura, N. Nishiyama and S. Arai,\\ "Injection type GaInAsP/InP DFB lasers directly bonded on SOI substrate,"\\  International Nano-Optoelectronic Workshop 2008 (iNOW 2008), Tokyo, Saiko and Shonan (Japan), P4-16, Aug. 8, 2008.
-.	K. Inoue, N. Nishiyama, H. Enomoto, S. Tamura, T. Maruyama and S. Arai, “Evaluation of Si wire waveguide fabricated by parallel plate RIE process using double layered EB resist containing C60,” International Nano-Optoelectronic Workshop 2008 (iNOW 2008), Tokyo, Saiko and Shonan (Japan), P3-24, Aug. 7, 2008.
+  - K. Inoue, D. Plumuwongrot, N. Nishiyama, S. Sakamoto, H. Enomoto, S. Tamura, T. Maruyama and S. Arai,\\ "Loss reduction of Si wire waveguide on SOI substrate prepared by parallel plate RIE using double layered resist mask with C<sub>60</sub>,"\\ the IEEE Nanotechnology Materials and Devices Conference 2008 (NMDC 2008), Kyoto (Japan), Mo P20, Oct. 20, 2008.
-.	H. Yonezawa, T. Maruyama, T. Okumura, N. Nishiyama and S. Arai, Injection type GaInAsP/InP DFB lasers directly bonded on SOI substrate,” International Nano-Optoelectronic Workshop 2008 (iNOW 2008), Tokyo, Saiko and Shonan (Japan), P4-16, Aug. 8, 2008.
-.	K. Inoue, D. Plumuwongrot, N. Nishiyama, S. Sakamoto, H. Enomoto, S. Tamura, T. Maruyama and S. Arai, “Loss reduction of Si wire waveguide on SOI substrate prepared by parallel plate RIE using double layered resist mask with C60,” the IEEE Nanotechnology Materials and Devices Conference 2008 (NMDC 2008), Kyoto (Japan), Mo P20, Oct. 20, 2008.
@@ 行 23: / 行 19: @@
   - 黒川宗高, プルームウォンロート・タノーム, 小沢浩二, 丸山武男, 西山伸彦, 荒井滋久,\\ 「GaInAsP/InP量子井戸構造のRIEプラズマによるPL強度劣化とアニールによる回復」,\\ 第55回応用物理学関係連合講演会, 28p-P9-7, 千葉, Mar. 28, 2008.
   - 奥村忠嗣, 丸山武男, 米澤英徳, 西山伸彦, 荒井滋久,\\ 「直接貼付法によるSOI基板上注入形GaInAsP/InP DFB レーザ」,\\ 第55回応用物理学関係連合講演会, 29p-ZQ-4, 千葉, Mar. 29, 2008.
-  - 井上敬太, プルームウォンロート･タノーム, 西山伸彦, 阪本真一, 榎本晴基, 田村茂雄, 丸山武男, 荒井滋久,\\ 「C60含有と非含有EBレジストZEPの重ね塗りによるSi導波路ドライエッチング形状の向上」,\\ 第55回応用物理学関係連合講演会, 29p-ZG-15, 千葉, Mar. 29, 2008.
+  - 井上敬太, プルームウォンロート･タノーム, 西山伸彦, 阪本真一, 榎本晴基, 田村茂雄, 丸山武男, 荒井滋久,\\ 「C<sub>60</sub>含有と非含有EBレジストZEPの重ね塗りによるSi導波路ドライエッチング形状の向上」,\\ 第55回応用物理学関係連合講演会, 29p-ZG-15, 千葉, Mar. 29, 2008.
   - 奥村忠嗣, 丸山武男, 米澤英徳, 西山伸彦, 荒井滋久,\\ 「SOI基板への直接貼り付け法によるGaInAsP/InP DFBレーザ」,\\ 電子情報通信学会レーザ・量子エレクトロニクス研究会, LQE2008-29, pp. 45-50, 東京, Jun. 27, 2008.
   - 小野裕佑, 高村俊裕, 丸山武男, 飯山宏一,\\ 「PETをコア層に用いた有機光導波路の検討」,\\ 平成20年度 電気関係学会北陸支部連合大会, D-29, 富山, Sep. 13, 2008.